P14N65TD2 Datasheet | Silan Microelectronics

DESCRIPTION SVSP14N65FJD/T/KD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 1 23 TO-262-3L 1.Gate 2.Drain 3.Source FEATURES - 14A,650V, RDS(on)(typ.)=0.26@VGS=10V - New revolutionary high voltage technology - Ultra low gate charge - Periodic avalanche rated - Extreme dv/dt rated - High peak current capability 12 3 TO-220FJD-3L TO-220-3L ORDERING INFORMATION Part No. SVSP14N65FJDD2 SVSP14N65TD2 SVSP14N65KD2 Package TO-220FJD-3L TO-220-3L TO-262-3L Marking P14N65FJD P14N65TD2 P14N65KD2 Hazardous Substance Control Halogen free Halogen free Halogen free Packing Type Tube Tube Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:1.3 Page 1 of 9 Silan Microelectronics SVSP14N65FJD/T/KD2_Datasheet ABSOLUTE MAXIMUM RATINGS (UNLESS OTHERWISE NOTED, TA=25C) Characteristics Symbol Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation (TC=25C) - Derate above 25C Single Pulsed Avalanche Energy...